| 1999 |
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December |
Established and registered (trade name at establishment: NEC Hitachi Memory, Inc.) |
| 2000 |
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April |
Began development operations for DRAM products, using 0.11µm or lower process |
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May |
Changed trade name to Elpida Memory, Inc. (announced in September 2000) |
| 2001 |
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February |
Began construction of 300mm wafer fabrication plant (hereafter, E300 Fab) |
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Started sales operations in domestic market |
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March |
Started sales operations in foreign markets (North America, Europe, and Asia) |
| 2003 |
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January |
Completed trial manufacturing at E300 Fab and began production activities |
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March |
Took on Mitsubishi Electric Corporation's DRAM operations and employed Mitsubishi development engineers |
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Finalized DRAM purchasing contract with Powerchip Semiconductor Corporation of Taiwan (hereafter, PSC) |
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August |
Finalized agreement with PSC for 0.11µm or lower DRAM design and process technology license |
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September |
Established Hiroshima Elpida Memory, Inc. (hereafter, Hiroshima Elpida) as a subsidiary responsible for production |
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November |
Reached basic agreement with Hiroshima University for comprehensive research collaboration |
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December |
Finalized agreement with China-based foundry company Semiconductor Manufacturing International Corporation for entrusting DRAM production to that company |
| 2004 |
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June |
Began expansion of E300 Fab |
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September |
Completed the asset purchase by Hiroshima Elpida, of the land, buildings, and production facilities required for operation previously owned by NEC Hiroshima, Ltd. |
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November |
Listed on the Tokyo Stock Exchange |
| 2005 |
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February |
Ovonyx and Elpida signed a technology licensing and support agreement for phase change memory |
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July |
Reached agreement with ADVANTEST CORPORATION, Kingston Technology Japan, LLC, and Powertech Technology Inc. (Taiwan) the joint creating of a new company, Tera Probe, Inc., to be located in Japan for DRAM wafer testing |
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October |
Commenced mass production of 90nm DRAM chips on E300 Fab Area 2 |
| 2006 |
January |
Established Kansai Design Center, located in Osaka, Japan |
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March |
Formed a cooperative relationship with Singapore FTD Technology Pte. Ltd. (hereafter, FTD) to establish Edison Semiconductor Pvt. Ltd., a subsidiary of FTD, in India as a design center |
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July |
Established Akita Elpida Memory, Inc. (hereafter, Akita Elpida) to take on the development of advanced back-end technology processes and the manufacture of advanced packages |
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October |
Established the Tohoku Design Center |
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December |
Commenced mass production of the world's first 70nm process DRAMs |
| 2007 |
January |
Reached official agreement with PSC regarding a DRAM manufacturing joint company, Rexchip Electronics Corporation |
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April |
Joined the IMEC CMOS research platform |
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Hiroshima Elpida of its 200mm wafer processing equipment to Cension Semiconductor Manufacturing Corporation |
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Akita Elpida successfully developed the world's thinnest 1.4mm multi chip package with 20 stacked dies |