History

1999
	December	Established and registered (trade name at establishment: NEC Hitachi Memory, Inc.)
2000
	April	Began development operations for DRAM products, using 0.11µm or lower process
	May	Changed trade name to Elpida Memory, Inc. (announced in September 2000)
2001
	February	Began construction of 300mm wafer fabrication plant (hereafter, E300 Fab)
		Started sales operations in domestic market
	March	Started sales operations in foreign markets (North America, Europe, and Asia)
2003
	January	Completed trial manufacturing at E300 Fab and began production activities
	March	Took on Mitsubishi Electric Corporation's DRAM operations and employed Mitsubishi development engineers
		Finalized DRAM purchasing contract with Powerchip Semiconductor Corporation of Taiwan (hereafter, PSC)
	August	Finalized agreement with PSC for 0.11µm or lower DRAM design and process technology license
	September	Established Hiroshima Elpida Memory, Inc. (hereafter, Hiroshima Elpida) as a subsidiary responsible for production
	November	Reached basic agreement with Hiroshima University for comprehensive research collaboration
	December	Finalized agreement with China-based foundry company Semiconductor Manufacturing International Corporation for entrusting DRAM production to that company
2004
	June	Began expansion of E300 Fab
	September	Completed the asset purchase by Hiroshima Elpida, of the land, buildings, and production facilities required for operation previously owned by NEC Hiroshima, Ltd.
	November	Listed on the Tokyo Stock Exchange
2005
	February	Ovonyx and Elpida signed a technology licensing and support agreement for phase change memory
	July	Reached agreement with ADVANTEST CORPORATION, Kingston Technology Japan, LLC, and Powertech Technology Inc. (Taiwan) the joint creating of a new company, Tera Probe, Inc., to be located in Japan for DRAM wafer testing
	October	Commenced mass production of 90nm DRAM chips on E300 Fab Area 2
2006	January	Established Kansai Design Center, located in Osaka, Japan
	March	Formed a cooperative relationship with Singapore FTD Technology Pte. Ltd. (hereafter, FTD) to establish Edison Semiconductor Pvt. Ltd., a subsidiary of FTD, in India as a design center
	July	Established Akita Elpida Memory, Inc. (hereafter, Akita Elpida) to take on the development of advanced back-end technology processes and the manufacture of advanced packages
	October	Established the Tohoku Design Center
	December	Commenced mass production of the world's first 70nm process DRAMs
2007	January	Reached official agreement with PSC regarding a DRAM manufacturing joint company, Rexchip Electronics Corporation
	April	Joined the IMEC CMOS research platform
		Hiroshima Elpida of its 200mm wafer processing equipment to Cension Semiconductor Manufacturing Corporation
		Akita Elpida successfully developed the world's thinnest 1.4mm multi chip package with 20 stacked dies