Elpida's 0.15µm 256Mbit PC133 SDRAM Devices Enable Low Latency (CL2) DIMMs up to 2GBytes

TOKYO, JAPAN, February 26th, 2001 - Elpida Memory, Inc. (Elpida), the industry's only major semiconductor company to focus completely on DRAM, announced today the availability of the industry's first 0.15µm 256Mbit PC133 Synchronous DRAM (SDRAM) device that supports CAS Latency 2 (CL2), along with a family of high density DIMMs (Dual In-line Memory Modules) based on the new device. The device is the industry's highest performing single data rate (SDR) 256Mbit SDRAM. The DIMMs range in density from 512MBytes to the industry's first 2GB DIMM measuring 1.65" high.

0.15µm, 256Mbit PC133 SDRAM Device Achieves CL2
Elpida's newest 256Mbit PC133 SDRAM devices are available in a x4, x8 or x16 configuration, and they use a 0.15µm process technology which results in a device that is 35% smaller than devices built using the previous generation 0.18µm technology. This smaller process geometry also allows the device to achieve a performance improvement due to the CL2. CAS Latency measures the number of clock cycles that occur from the time the DRAM sends the column address to the processor until the DRAM actually sends out the valid data to the processor. Therefore, the fewer the number of wait cycles, or the lower the latency, the faster the memory actually runs. For applications that deal with many random data accesses, such as 3D graphics, or high-end servers and workstations, CAS Latency can be even more important than bandwidth in determining the memory system performance. While the new device still operates at 133MHz in accordance with the PC133 standard, previous 256Mbit PC133 SDRAM devices only achieved CL3, or three wait cycles per data access. These new smaller devices also save on power consumption as an additional advantage with respect to previous generations. Therefore, these devices are the smallest, highest performing, and lowest power in their class.

High Density, High Performance DIMMs Come in Standard Sizes
The 2GByte and 512MByte DIMMs are available in Registered mode and fit within the standard height of 1.7" for server applications, while the 512MByte version is also available in Unbuffered mode with a height of 1.375" for PC and workstation applications. All of these DIMMs use the new 0.15µm, 256Mbit PC133 SDRAM device. They offer faster access times and lower latency (CL2 vs CL3) than DIMMs using the previous 0.18µm devices. These high-density DIMMs are configured with a x72 organization (256Mx72, 128Mx72, and 64Mx72, respectively) to support error correction code (ECC). They deliver high bandwidths (up to 1.066 GByte/second on a 64-bit bus; up to 4.2 GByte/second on a 256-bit bus) to maximize the throughput of high-speed CPUs. The on-board PLL and registers minimize bus loading to ensure stable operation. The modules conform to the JEDEC and industry standard for 8-Byte DIMMs, enabling easy, plug-in upgrades from previous-generation DRAM modules, and existing core logic chipsets that support the PC133 standard will support these faster CL2 DIMMs.

Availability

About Elpida Memory, Inc.
Elpida Memory, Inc. (formerly NEC-Hitachi Memory, Inc.) is a global corporation with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida's research, design and development operations were merged from NEC and Hitachi on April 1, 2000 and sales and marketing operations commenced during January 2001. Elpida's entire DRAM semiconductor product line is now marketed under the Elpida brand name and includes DRAM devices and modules inherited from both NEC and Hitachi, as well as new products designed and developed by Elpida. Elpida's main DRAM foundries are located at NEC Hiroshima and Hitachi Nippon Steel Semiconductor Singapore with additional production capacity available from other NEC fabs. Elpida's own 300mm fab is scheduled to begin production during 2002. For datasheets and more information, visit Elpida's World Wide Web site at www.elpida.com