Elpida Memory's 128 Mbit Mobile RAM Operates at a Low 1.8 Volts for Mobile Applications
Tiny, 8 mm² FBGA Package Saves Space
TOKYO, JAPAN, October 29, 2001 - Elpida Memory, Inc. (Elpida), the industry's only major semiconductor company to focus completely on DRAM, announced today the availability of its 128 Mbit Mobile RAM that achieves super-low power operation at 1.8V, making it well suited for mobile applications such as cellular phones and PDAs. 2.5V versions and 64 Mbit versions of Elpida's Mobile RAM series are also available.
According to Akira Yabu, technical marketing and engineering manager for Elpida Memory (USA) Inc., "Mobile applications such as cellular phones and PDAs are beginning to process larger amounts of data and sound, including streaming video, due to the explosive growth of the Internet and the performance increases of wireless communications. Such circumstances increase the need for fast, high-capacity RAM that consumes less power, and are the driving factors behind Elpida's application-specific Mobile RAM."
Mobile RAM Specifications and Low Power Features:
Elpida has been actively involved in defining the JEDEC (Joint Electron Device Engineering Council) standard specifications for low power SDRAMs since its inception, and Elpida's Mobile RAM Series is fully compliant with the new JEDEC standard. Elpida's Mobile RAM currently achieves a very lows supply voltage (Vdd) operation of 1.8V ±0.15V, reducing power consumption and extending battery life for mobile applications. The operating currents for Elpida's 128 Mbit and 64 Mbit Mobile RAM devices are 80mA and 40mA respectively, while the self-refresh current (Idd6) is an incredibly low 350µA for the 128 Mbit device, and 250µA for the 64 Mbit device. This Idd6 value offers substantial power savings (280 to 400%) compared with standard synchronous DRAMs that have a typical self-refresh current in the range of 1mA. Elpida's Mobile RAM series also features a Deep Power Down (DPD) mode to save power when the applications are not in use, and they have a Partial Array Self Refresh (PASR) that offers further power savings by managing the memory area to be refreshed within the device. Because many mobile applications may become subject to extreme temperatures, Elpida designed the Mobile RAM to withstand a temperature range from -25°C to+85°C. With this in mind, the devices also feature Temperature Compensated Self-Refresh (TCSR) that enables the Mobile RAM to adjust its refresh rate and power consumption at extreme temperatures to ensure device reliability.
The 128 Mbit and 64 Mbit devices are manufactured using Elpida's proven 0.15µm CMOS DRAM process technology. They employ a synchronous interface and operate at 100 MHz with CAS latency = 3. The 2.5V versions are available at both 128 Mbit and 64 Mbit densities, and they operate at a faster, 133 MHz, also with CAS latency = 3. The I/O supply voltage is 1.8V ± 0.15V for both the 100 MHz and the 133 MHz versions. The 128 Mbit devices have an internal organization of 2M words x 16 bits x 4 banks, while the 64 Mbit versions are organized as 1M word x 16 bits x 4 banks. Both the 128 Mbit and 64 Mbit versions come in tiny (8mm x 8mm x 1mm) 54-ball FBGA (Fine-pitch Ball Grid Array) packages, enabling high-density component mounting for small mobile designs.
Denali Software provides DRAM Simulation Models for Advanced Verification
Denali Software, Inc., the world's leading provider of solutions for memory system design automation, has developed a library of simulation models for Elpida's Mobile RAM Series. The models utilize Denali's Specification of Memory Architecture (SOMA™) that enables designers to quickly integrate and verify the optimum usage of Elpida's Mobile RAM components within their new designs. The SOMA models are available immediately at: http://www.eMemory.com/Elpida-Mobile-RAM/. Additional information about Denali is available at www.denali.com.
Availability
| Elpida Part Number | Description | Availability |
| EDL1216CA | 128 Mbit, 100 MHz, Vdd = 1.8V ± 0.15V | Samples December; volume Q2 2002 |
| EDL1216AA | 128 Mbit, 133 MHz, Vdd = 2.5V ± 0.20V | Samples December; volume Q2 2002 |
| EDL6416CA | 64 Mbit, 100 MHz, Vdd = 1.8V ± 0.15V | Samples January 2002; volume Q2 2002 |
| EDL6416AA | 64 Mbit, 133 MHz, Vdd = 2.5V ± 0.20V | Samples January 2002; volume Q2 2002 |
About Elpida Memory, Inc.
Elpida Memory, Inc. is a global corporation with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida's research, design and development operations were merged from NEC and Hitachi on April 1, 2000 and sales and marketing operations commenced in Q1, 2001. Elpida's entire DRAM semiconductor product line is now marketed under the Elpida brand name and includes DRAM devices and modules inherited from both NEC and Hitachi, as well as new products designed and developed by Elpida. Elpida's main DRAM foundries are located at NEC Hiroshima and Hitachi Nippon Steel Semiconductor Singapore. Elpida's own 300mm DRAM wafer manufacturing facility is scheduled to begin production by January 2003.
SOMA™ is a trademark of Denali Software, Inc. All other trademarks are the property of their respective owners.
Information in this news release is current as of the timing of the release, but may be revised later without notice.