Elpida Memory Delivers Samples of 0.13 micron, 512 Megabit DDR SDRAM to High-end Server Vendors

TOKYO, JAPAN, December 17, 2001 - Elpida Memory, Inc. (Elpida), the industry's only major semiconductor company to focus completely on DRAM, announced today the availability of the industry's first 0.13 micron, 512 Megabit, Double Data Rate (DDR) Synchronous DRAM (SDRAM) devices that are fully compatible with the JEDEC industry standard specification for 333 MHz, 266 MHz or 200 MHz DDR SDRAM. Elpida's EDD510x devices represent the world's smallest 512 Megabit devices, and they enable high-density modules up to 2 Gigabytes with fast, low-latency PC2700 performance.

Elpida's 512 Megabit DDR SDRAM Provides High Performance and Density
The new devices offer exceptional main memory performance and density for high-end desktop and notebook PCs, as well as workstations and server applications. Elpida's EDD510x DDR SDRAMs are available in 128M word x 4-bit or 64M word x 8-bit configuration, and they each have four internal banks. The devices use 2.5 V for core and I/O power supply voltage, and they support 100 MHz, 133 MHz and 166 MHz main clock speeds for 200 MHz, 266 MHz and 333 MHz data rates, respectively. Both the 200 MHz and 266 MHz devices support the performance mode (CAS Latency-tRCD-tRP) of 2-2-2, which is two to two and a half times faster than previous 266 MHz versions that only supported the 2.5-3-3 performance mode. For high performance server applications that typically have two to four channels of memory on a x72-bit data bus, the 266 MHz, 2-2-2 version will match the performance requirements of the CPU's Front Side Bus (FSB) as well as PCI-X-based I/O devices. Since 333 MHz marks the next speed grade for main memory, Elpida's 333 MHz DDR SDRAM devices are an evolutionary upgrade from 266 MHz DDR SDRAM devices, and they support the 2.5-3-3 performance mode.

In terms of density, one of the new 512 Megabit devices replaces two 256 Megabit devices on a standard-sized DIMM, effectively doubling the DIMM capacity. The 512 Mbit devices are available in industry standard 66-pin TSOP II packages, and modules based on the new devices will be available from Elpida after volume production begins. Samples of the 512 Megabit DDR devices were delivered to Elpida customers in December 2001 for evaluation in their high-end server designs.

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About Elpida Memory, Inc.
Elpida Memory, Inc. is a global corporation with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida's research, design and development operations were merged from NEC and Hitachi on April 1, 2000 and sales and marketing operations commenced in Q1, 2001. Elpida's entire DRAM semiconductor product line is now marketed under the Elpida brand name and includes DRAM devices and modules inherited from both NEC and Hitachi, as well as new products designed and developed by Elpida. Elpida's main DRAM foundries are located at NEC Hiroshima and Hitachi Nippon Steel Semiconductor Singapore. Elpida's own 300 mm DRAM wafer manufacturing facility is scheduled to begin production by January 2003.