Elpida Memory's WTR (Wide Temperature Range) SDRAM Devices Target Auto GPS and Industrial Markets
128-Megabit and 256-Megabit Memory Devices Offer Flawless Performance in Harsh Environmental Conditions
TOKYO, JAPAN, May 28, 2002 - Elpida Memory, Inc. (Elpida), announced today the availability of high-performance WTR (Wide Temperature Range) Synchronous DRAM (SDRAM) devices for use in automotive GPS, remote communications, and industrial applications. The WTR SDRAMs offer the same functionality and compatibility as standard SDRAM devices, but operate at a much wider range of ambient temperatures (TA= -40 to 85°C) versus standard SDRAM (TA= 0 to 70°C). This makes Elpida WTR SDRAMs ideal for any type of high-performance system that is subject to harsh temperature extremes.
"High-performance computing has expanded from the desktop into many different form factors and operating environments, and there is a strong demand for SDRAM modules that perform flawlessly under a wide range of environmental conditions," said Jun Kitano, director of Technical Marketing for Elpida Memory (USA) Inc. "Elpida is responding to these demands with WTR SDRAMs that are robust enough for almost any application. By utilizing the most advanced circuit design techniques, our WTR SDRAM products offer the same performance and compatibility as standard SDRAMs, but under extreme temperatures."
Elpida's WTR SDRAMs achieve high-speed data transfer using a pipelined 133 Mhz Synchronous DRAM architecture. They are available in 128-Megabit and 256-Megabit densities, and even with their WTR SDRAM functionality, customers are not required to implement a specialized SDRAM controller. This simplifies testing for motherboard and system vendors who design for both standard and rugged environments. The products are packaged in 54-pin TSOP (II).
Summary of Features:
| Part Number | EDS2516APTA-75TI | UPD45128163G5-A75I-9JF | |
|---|---|---|---|
| Density | 256Mbit | 128Mbit | |
| Operating Temperature | -40 to 85°C | -40 to 85°C | |
| Process | 0.15µm CMOS | 0.18µm CMOS | |
| Organization | 4Mword x 16bit x 4Bank | 2Mword x 16bit x 4bank | |
| Supply voltage | 3.3V±0.3V | 3.3V±0.3V | |
| Clock frequency | 133MHz (max.) @CL=3 | 133MHz (max.) @CL=3 | |
| Self refresh current (Icc6) |
Standard | 3mA (max.) | 2mA (max.) |
| Low Power | 1.5mA (max.) | 0.8mA (max.) | |
| Package | 54-pin TSOP II | 54-pin TSOP II | |
About Elpida Memory, Inc.
Elpida Memory, Inc. is a technology leader in Dynamic Random Access Memory (DRAM) with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida offers a broad range of leading-edge DRAM products including RDRAM®, SDRAM, DDR SDRAM, Mobile RAM and Consumer SDRAM. Device densities currently range up to 512 Megabits each, and Module (DIMM) densities range up to 2 Gigabytes each. Elpida offers a variety of standard and high performance packaging techniques, including TSOP, BGA, FBGA, Tape Carrier Package (TCP), and Double Density Package (DDP). Elpida's research, design and development operations were merged from NEC and Hitachi on April 1, 2000 and sales and marketing operations commenced in Q1, 2001. Elpida's main DRAM foundries are located at NEC Hiroshima and Hitachi Nippon Steel Semiconductor Singapore. Elpida's own 300 mm DRAM wafer manufacturing facility is scheduled to begin production by January 2003.
Information in this news release is current as of the timing of the release, but may be revised later without notice.