Elpida Memory First to Deliver 512 Megabit DDR2 SDRAM Devices to Customers
512 Megabit Devices Deliver 533 Megabits per Second Data Transfer Rate at 1.8 Volts
TOKYO, JAPAN, July 1, 2002 - Elpida Memory, Inc. (Elpida), announced today that they have delivered DDR2 SDRAM samples to high-end computing customers. Designed for high-performance servers, high-speed networks and high-end PCs, the 512 Megabit DDR2 (Double Data Rate-II) SDRAM offers a data transfer rate of 533 Megabits per second (Mbps), which is twice the rate of first-generation DDR devices, while consuming 30% less power.
In addition to offering high density and bandwidth, Elpida Memory's DDR2 SDRAM devices incorporate an SSTL 1.8 Volt (V) standard interface and advanced DDR2 features such as On Die Termination (ODT) for maximum signal integrity; Off-chip output Driver impedance Calibration (ODC) for improved system timing margins; differential strobe; posted CAS; and various bus utilization enhancements. These new capabilities require only minimal design changes, enabling easy and rapid migration from DDR technology.
The potential performance of DDR2 SDRAMs is further enhanced by Elpida's advanced circuit technologies and low-impedance hierarchical I/O architecture, unveiled by Elpida at the 2002 VLSI Symposium on Circuits on June 14, 2002. The new technologies enable 1 Gigabit per second, per pin operation with a 1.8 V power supply in a multi-Gigabit DRAM.
"Elpida is committed to providing our customers with the latest, advanced memory technologies, and these new DDR2 SDRAM devices are the first chance for the industry to begin hands-on preparations for new DDR2 designs," said Jun Kitano, director of Technical Marketing for Elpida Memory (USA) Inc. "At Elpida, we will continue to leverage our advanced technological and production capabilities to deliver timely products that give our customers the edge in a highly competitive marketplace."
Availability
Elpida Memory's EDE51xxG Series DDR2 SDRAMs are made with Elpida's proven 0.13µm process technology, and they are available in FBGA packages.
| Elpida Part Number | Description | Availability |
|---|---|---|
| EDE5104G | 512 Megabit DDR2 SDRAM device (32M Word x 4-bit x 4-bank) |
Samples: Now Volume: Q1 '03 |
| EDE5108G | 512 Megabit DDR2 SDRAM device (16M Word x 8-bit x 4-bank) |
Samples: Now Volume: Q1 '03 |
| EDE5116G | 512 Megabit DDR2 SDRAM device (8M Word x 16-bit x 4-bank) |
Samples: Now Volume: Q1 '03 |
About Elpida Memory, Inc.
Elpida Memory, Inc. is a technology leader in Dynamic Random Access Memory (DRAM) with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida offers a broad range of leading-edge DRAM products including RDRAM®, SDRAM, DDR SDRAM, Mobile RAM and Consumer SDRAM. Device densities currently range up to 512 Megabits each, and Module (DIMM) densities range up to 2 Gigabytes each. Elpida offers a variety of standard and high performance packaging techniques, including TSOP, BGA, FBGA, Tape Carrier Package (TCP), and Double Density Package (DDP). Elpida's research, design and development operations were merged from NEC and Hitachi on April 1, 2000 and sales and marketing operations commenced in Q1, 2001. Elpida's main DRAM foundries are located at NEC Hiroshima and Hitachi Nippon Steel Semiconductor Singapore. Elpida's own 300 mm DRAM wafer manufacturing facility is scheduled to begin production by January 2003.
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Information in this news release is current as of the timing of the release, but may be revised later without notice.