Elpida Memory's 1066 MHz Rambus® DRAMs Deliver Performance Boost for Desktop, Workstation and Networking Applications
288 Megabit Samples Have Passed Rambus' Validation Process and Are Available in Modules up to 512 Megabytes
TOKYO, Japan, January 27, 2003 - Elpida Memory, Inc. (Elpida), announced today the availability of its 288 Megabit Rambus® DRAM (RDRAM) devices that operate at speeds up to 1066 MHz. Elpida's newest high-frequency, low-latency RDRAM devices deliver the highest memory performance for workstation, high-end desktop and networking applications. They are produced using Elpida's 0.13 micron process technology and are packaged in fine-pitch ball-grid array (FBGA) packages. The RDRAM devices enable RIMM and Small Outline RIMM modules ranging in density from 128 Megabytes to 512 Megabytes in a wide range of module form factors.
"Elpida continually strives to offer its customers the latest in advances in RDRAM technology," said Jun Kitano, director of Technical Marketing, Elpida Memory (USA). "Elpida's 1066 MHz RDRAM devices satisfy OEMs' needs for a cost-effective, high-frequency, high-bandwidth memory solution."
High Speed, Low Latency, and Advanced Power Management
Elpida's new 288 Megabit RDRAM device utilizes Rambus Signaling Level (RSL) technology, which permits the device to achieve data transfer rates up to 1066 MHz with high reliability on conventional RDRAM system and board designs. The RDRAM architecture allows the highest sustained bandwidth for multiple, simultaneous and randomly-addressed memory transactions. These devices are capable of sustained data transfers at 0.94 nanoseconds (ns) per two bytes (or 7.5 ns per sixteen bytes). The new device also incorporates several low-latency features including a write buffer to reduce read latency, three pre-charge mechanisms for controller flexibility and interleaved transactions. Advanced power management features include multiple low-power states for flexible 'power consumption versus time-to-active-state' and power-down self refresh.
The 288 Megabit RDRAM devices and the associated RIMM modules that are built using the new devices have passed Rambus 'validation'. Elpida plans to support higher frequency 1200 MHz and 1333 MHz RDRAM devices in the near future.
Availability
| Description | Density | Type | Elpida Part Number | Sample |
|---|---|---|---|---|
| 1066MHz, x18 RDRAM device | 288Mbit | - | EDR2518ABSE-AEP | NOW |
| 184-pin RIMM | 512MB | ECC | EBR51EC8ABFD | NOW |
| 160-pin SO-RIMM | 256MB | ECC | EBR25EC8ABSA | NOW |
| 232-pin RIMM | 512MB | ECC | EBR51EC8ABKD | NOW |
| 256MB | ECC | EBR25EC8ABKD | NOW |
About Elpida Memory, Inc.
Elpida Memory, Inc. is a technology leader in Dynamic Random Access Memory (DRAM) with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida offers a broad range of leading-edge DRAM products including RDRAM®, SDRAM, DDR SDRAM, Mobile RAM and Consumer SDRAM. Device densities currently range up to 512 Megabits each, and Module (DIMM) densities range up to 2 Gigabytes each. Elpida offers a variety of standard and high performance packaging techniques, including TSOP, BGA, FBGA, Tape Carrier Package (TCP), and Double Density Package (DDP). Elpida's research, design and development operations began as a joint venture between NEC and Hitachi on April 1, 2000, and sales and marketing operations commenced in Q1, 2001.
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Information in this news release is current as of the timing of the release, but may be revised later without notice.