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Hiroshima, June 10, 2004 - Elpida Memory, Inc (Elpida), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), and Hiroshima Elpida Memory, Inc (Hiroshima Elpida), today announced that they have started construction on a second 300 mm wafer fabrication facility. Hiroshima Elpida's first 300 mm facility will also expand its production capacity. Both activities are part Elpida's strategy to expand its semiconductor mass production to meet growing customer demand for leading-edge, high-performance DRAM products.
The new 300 mm plant will be constructed directly adjacent to the first 300 mm facility and is slated to begin mass production during the second half of 2005. Elpida will introduce 85 nanometer (nm) processing at the new facility later that year. The construction area is approximately 23,000 square meters with a gross floor space of approximately 91,000 square meters-almost double the size of the existing facility. Elpida plans to expand the production capacity of the new facility in several stages leading up to a maximum capacity of 60,000 wafers per month. The total construction cost is estimated at 450 billion Yen to 500 billion Yen (approximately US$4.1 billion to 4.5 billion*).
Hiroshima Elpida's first 300 mm facility is currently engaged in the test and mass production of semiconductor products, and Elpida plans to increase its production capacity from 22,000 wafers per month to 28,000 wafers per month during the second half of 2004. The facility, which began operation in January 2003, primarily manufactures high-density DRAM products for the server market. However, there are future plans to manufacture 1 Gigabit DDR2 SDRAM products as well as Mobile RAM devices for cellular applications and 0.11-micron Digital Consumer DRAM devices for the rapidly-growing consumer electronics market.
For additional information regarding Hiroshima Elpida and its new 300 mm fabrication plant, please refer to the separate outline document.
Note: Production capacity is represented by the number of 300 mm wafers.
* Assumes an exchange rate of US$1.00 = 110 Yen
About Hiroshima Elpida Memory, Inc.
Hiroshima Elpida Memory, Inc. was established on September 1, 2003 as a wholly owned subsidiary of Elpida Memory, Inc. Hiroshima Elpida operates a 200 mm manufacturing facility and a state-of-the-art 300 mm wafer fabrication facility. Hiroshima Elpida provides Elpida with a strong foundation for its entire DRAM business including device development, leading-edge process technology and production capabilities.
About Elpida Memory, Inc.
Elpida Memory, Inc. is a manufacturer of Dynamic Random Access Memory (DRAM) with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida offers a broad range of leading-edge DRAM products. Elpida is a joint venture company formed by NEC and Hitachi on December 20, 1999 and has been in operation since April 2000.
All trademarks are the property of their respective owners.
Information contained in this news release is current on the date of the press announcement, but may be subject to change without prior notice.
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