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TOKYO, JAPAN, March 2, 2005 - Elpida Memory, Inc. (Elpida), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced availability of high-performance 512 Megabit and 256 Megabit Mobile RAM devices that support advanced video and multimedia capabilities for cellular applications. The new devices are offered as bare chips for stacking flexibility with other semiconductors such as flash memory and microprocessors in Multi-Chip-Package (MCP) and System-in-Package (SiP) designs. The Mobile RAM devices can support a variety of densities-from 256 Megabit to 1 Gigabit-within the same small form-factor package. This flexibility is crucial in cellular applications where board space is limited.
"Elpida has always been very focused on low voltage and packaging trends mobile applications," said Akira Yabu, manager of Technical Marketing at Elpida Memory (USA). "Our Mobile RAM products offer our customers the density, speed and stacking flexibility necessary to support the adoption of advanced multimedia applications in cellular phones."
Trends in Mobile Technology
The Asian market is driving mobile technology, and it is now commonplace to find advanced features such as television, FM radio, video-on-demand, navigation and even identification capabilities available in today's mobile phones, and demand for these features is increasing globally. Multimedia requires more robust computing power as well as higher processor speeds, memory bus speeds and density to support the simultaneous use of multiple applications. While current demand calls for densities in the 256 Megabit to 512 Megabit range, new applications require DRAM in densities as high as 1 Gigabit.
Stacking Flexibility
Elpida offers several solutions for easy implementation in small form-factor SiP and MCP designs. The newly released Mobile RAM device densities are available with an identical pad order which facilitates system migration to a higher density DRAM with minimal need for redesign. For example, a system upgrade to a 768 Megabit density can be achieved by stacking one 512 Megabit Mobile RAM device and one 256 Megabit Mobile RAM device together. Since these two devices have an identical pad order, most of the signals tie together easily eliminating the need for an extended design cycle.
Elpida's Mobile RAM devices also support single-edge pad and dual-edge pad layouts.
The single-edge pad layout is ideal for stacking DRAM with a processor, while a dual-edge PAD layout allows the design flexibility needed when stacking DRAM with flash memory.
Elpida's Mobile RAM Devices - Technical Details
Elpida's new 512 Megabit and 256 Megabit Mobile RAM devices are available in DDR and SDR architectures with both x32-bit and x16-bit widths. The devices offer a data transfer rate of 333 Megabits per second (Mbps) with low 1.8 volt operation. They are produced using Elpida's advanced 0.10-micron process technology. The Mobile RAM devices are also available in FBGA packages for board evaluation purposes.
Availability
Elpida's Mobile RAM device samples (Part numbers: ECK5132CA, ECK5416CA, ECL5432CA, ECL5416CA -512 Megabit; ECK2532CD, ECL2532CD -256 Megabit) are currently available to customers. Volume production is expected begin in Q2 2005.
About Elpida Memory, Inc.
Elpida Memory, Inc. is a manufacturer of Dynamic Random Access Memory (DRAM) silicon chips with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida's state-of-the-art semiconductor wafer manufacturing facilities are located in Hiroshima, Japan. Elpida offers a broad range of leading-edge DRAM products for high-end servers, mobile phones, digital television sets and digital cameras as well as personal computers. Elpida had sales of ¥100.4 billion during the fiscal year ending March 31, 2004.
Mobile RAM is a trademark of Elpida Memory, Inc.
All other trademarks are the property of their respective owners.
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The information contained within this news release, is current as of the date of release. Please note that the information herein may be revised later without prior notice.
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