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TOKYO, JAPAN, July 15, 2008 – Elpida Memory, Inc. (Elpida), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), announced today that it has developed a top-tier power efficient 1 Gigabit DDR3 SDRAM, which is capable of operating at an ultra-fast speed of 2 Gigabits per second (Gbps). By reducing power consumption to around the lowest possible level the new high-performance environmentally friendly DRAM marks an important milestone in Elpida's aggressive development of eco-products.
Currently, the industry's fastest standard DDR3 SDRAM, the DDR3-1600, supports a data transfer rate of up to 1600 Megabits per second (Mbps) while operating at 1.5V. The new DDR3 SDRAM developed by Elpida uses 35% less operating current compared with the company's existing products and can support an operating speed of 2Gbps, which is considerably faster than the industry standard of 1600Mbps at 1.5V. Also, in response to demand for next-generation low-power products Elpida's new device can operate at 1600Mbps using 1.35V.
Elpida's new DDR3 SDRAM is based on advanced 65nm process technology. Sample shipments will start in September 2008 with mass production expected to begin the next month in October.
To meet today's dual demand for lower power consumption and faster speeds, Elpida will provide its new energy efficient DRAM product for such target applications as servers, the growing number of DDR3-model PCs, digital TVs that need to rapidly process high-resolution images and the upcoming Blu-ray disc recorder growth market.
Elpida will continue to develop additional low-power high-speed products and expand its line-up of eco-products to meet today's needs.
New Product Features
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1-Gigabit DDR3 SDRAM |
| Part Number |
EDJ1104BBSE
EDJ1108BBSE
EDJ1116BBSE |
| Data Transfer Rates |
DDR3-2000 (11-11-11)
DDR3-1867 (11-11-11)
DDR3-1600 (9-9-9) |
| Design Process |
65nm |
| Supply Voltage |
1.5V+/-0.075V |
| Packages |
78-ball FBGA (x4/x8)
(8.00mm x 11.50mm)
96-ballFBGA (x16)
(8.00mm x 13.50mm)
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About Elpida
Elpida Memory, Inc. (TSE 6665) is a leading manufacturer of Dynamic Random Access Memory (DRAM) integrated circuits. The company's design, manufacturing and sales operations are backed by world class technological expertise. Its 300mm manufacturing facilities, consisting of its Hiroshima Plant and a Taiwan-based joint venture, Rexchip Electronics, utilize the most advanced manufacturing technologies available. Elpida's portfolio features such characteristics as high-density, high-speed, low power and small packaging profiles. The company provides DRAM solutions across a wide range of applications, including high-end servers, mobile phones and digital consumer electronics. More information can be found at http://www.elpida.com.
Information in this news release is current as of the timing of the release, but may be revised later without notice.
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