Elpida to Delay Start of China-based Manufacturing Joint Venture
TOKYO, JAPAN, November 6, 2008 – Elpida Memory, Inc. (Elpida), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it will delay the start of operations of a China-based DRAM manufacturing joint venture the company previously announced on August 6.
Elpida planned the manufacturing joint venture with SVG, a Chinese venture capital group based in Suzhou City. The JV was scheduled to begin operations in the first quarter of CY 2010. However, given an unprecedented slump in the DRAM market and the uncertain global economy, Elpida and SVG decided to delay the start of the operations for about one year or until a market recovery is forecast. Both companies will determine the best time to bring the China facility into operation by carefully observing DRAM market conditions.
Overview of the China-based Joint Venture
Location: Suzhou Industrial Park, Suzhou City, Jiangsu Province, China
Manufacturing capacity: An initial plan of 40,000 wafers per month (300mm fab) (later, scalable to 80,000 wpm)
About Elpida
Elpida Memory, Inc. (Tokyo: 6665) is a leading manufacturer of Dynamic Random Access Memory (DRAM) integrated circuits. The company's design, manufacturing and sales operations are backed by world class technological expertise. Its 300mm manufacturing facilities, consisting of its Hiroshima Plant and a Taiwan-based joint venture, Rexchip Electronics, utilize the most advanced manufacturing technologies available. Elpida's portfolio features such characteristics as high-density, high-speed, low power and small packaging profiles. The company provides DRAM solutions across a wide range of applications, including high-end servers, mobile phones and digital consumer electronics. More information can be found at http://www.elpida.com.
Information in this news release is current as of the timing of the release, but may be revised later without notice.