EBE10UE8AFFA
Specifications
- Density: 1GB
- Organization
-128M words x 64 bits, 1 rank
- Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA
- Package: 240-pin socket type dual in line memory module (DIMM)
-PCB height: 30.0mm
-Lead pitch: 1.0mm
-Lead-free (RoHS compliant) and Halogen-free
- Power supply: VDD = 1.8V +/- 0.1V
- Data rate: 800Mbps/667Mbps (max.)
- Eight internal banks for concurrent operation (components)
- Interface: SSTL_18
- Burst lengths (BL): 4, 8
- /CAS Latency (CL): 3, 4, 5, 6
- Precharge: auto precharge option for each burst access
- Refresh: auto-refresh, self-refresh
- Refresh cycles: 8192 cycles/64ms
-Average refresh period
7.8 µs at 0'C <= TC <= +85'C
3.9 µs at +85'C < TC <= +95'C
- Operating case temperature range
-TC = 0'C to +95'C
Features
- Double-data-rate architecture; two data transfers per clock cycle
- The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
- Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
- DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Data mask (DM) for write data
- Posted /CAS by programmable additive latency for better command and data bus efficiency
- Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality
- /DQS can be disabled for single-ended Data Strobe operation
User's Manual, Technical Note
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