EBE82FF4A1RQ
- Density: 8GB
- Organization
-1024M words x 72 bits, 4 ranks
- Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP (FBGA)
-DDP: 2 pieces of 1Gb chips sealed in one package
- Package
-240-pin fully buffered, socket type dual in line memory module (FB-DIMM)
PCB height: 30.35mm
Lead pitch: 1.0mm
-Advanced Memory Buffer (AMB): 655-ball FCBGA
-Lead-free (RoHS compliant)
- Power supply
-DDR2 SDRAM: VDD = 1.8V +/- 0.1V
-AMB: VCC = 1.5V +0.075V/-0.045
- Data rate: 667Mbps
- Eight internal banks for concurrent operation (components)
- Interface: SSTL_18
- Burst lengths (BL): 4, 8
- /CAS Latency (CL): 3, 4, 5
- Precharge: auto precharge option for each burst access
- Refresh: auto-refresh, self-refresh
- Refresh cycles: 8192 cycles/64ms
-Average refresh period
7.8 µs at 0'C <= TC <= +85'C
3.9 µs at +85'C < TC <= +95'C
- Operating case temperature range
-TC = 0'C to +95'C
- JEDEC standard Raw Card D Design
- Industry Standard Advanced Memory Buffer (AMB)
- High-speed differential point-to-point link interface at 1.5V (JEDEC spec)
-14 north-bound (NB) high speed serial lanes
-10 south-bound (SB) high speed serial lanes
- Various features/modes:
-MemBIST and IBIST test functions
-Transparent mode and direct access mode for DRAM testing
-Interface for a thermal sensor and status indicator
- Channel error detection and reporting
- Automatic DDR2 SDRAM bus and channel calibration
- SPD (serial presence detect) with 1 piece of 256 byte serial EEPROM
| Part Number |
Grade |
Package |
Datasheet |
IBIS |
Verilog |
| EBE82FF4A1RQ-6E-E |
PC2-5300F |
DDP |
E1242E20 |
TBD |
|
|