EBE82FF4A1RQ

Specifications

Density: 8GB
Organization
-1024M words x 72 bits, 4 ranks
Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP (FBGA)
-DDP: 2 pieces of 1Gb chips sealed in one package
Package
-240-pin fully buffered, socket type dual in line memory module (FB-DIMM)
PCB height: 30.35mm
Lead pitch: 1.0mm
-Advanced Memory Buffer (AMB): 655-ball FCBGA
-Lead-free (RoHS compliant)
Power supply
-DDR2 SDRAM: VDD = 1.8V +/- 0.1V
-AMB: VCC = 1.5V +0.075V/-0.045
Data rate: 667Mbps
Eight internal banks for concurrent operation (components)
Interface: SSTL_18
Burst lengths (BL): 4, 8
/CAS Latency (CL): 3, 4, 5
Precharge: auto precharge option for each burst access
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
-Average refresh period
7.8 µs at 0'C <= TC <= +85'C
3.9 µs at +85'C < TC <= +95'C
Operating case temperature range
-TC = 0'C to +95'C

JEDEC standard Raw Card D Design
Industry Standard Advanced Memory Buffer (AMB)
High-speed differential point-to-point link interface at 1.5V (JEDEC spec)
-14 north-bound (NB) high speed serial lanes
-10 south-bound (SB) high speed serial lanes
Various features/modes:
-MemBIST and IBIST test functions
-Transparent mode and direct access mode for DRAM testing
-Interface for a thermal sensor and status indicator
Channel error detection and reporting
Automatic DDR2 SDRAM bus and channel calibration
SPD (serial presence detect) with 1 piece of 256 byte serial EEPROM

Part Number	Grade	Package	Datasheet	IBIS	Verilog
EBE82FF4A1RQ-6E-E	PC2-5300F	DDP	E1242E20	TBD