EBJ11UE6BAU0
- Density: 1GB
- Organization
-128M words x 64 bits, 2 ranks
- Mounting 8 pieces of 1G bits DDR3 SDRAM sealed in FBGA
- Package: 204-pin socket type small outline dual in line memory module (SO-DIMM)
-PCB height: 30.0mm
-Lead pitch: 0.6mm
-Lead-free (RoHS compliant)
- Power supply: VDD = 1.5V +/- 0.075V
- Data rate: 1333Mbps/1066Mbps/800Mbps (max.)
- Eight internal banks for concurrent operation (components)
- Interface: SSTL_15
- Burst lengths (BL): 8 and 4 with Burst Chop (BC)
- /CAS Latency (CL): 5, 6, 7, 8, 9
- /CAS write latency (CWL): 5, 6, 7
- Precharge: auto precharge option for each burst access
- Refresh: auto-refresh, self-refresh
- Refresh cycles
-Average refresh period
7.8 µs at 0'C <= TC <= +85'C
3.9 µs at +85'C < TC <= +95'C
- Operating case temperature range
-TC = 0'C to +95'C
- Double-data-rate architecture; two data transfers per clock cycle
- The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture
- Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
- DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Data mask (DM) for write data
- Posted /CAS by programmable additive latency for better command and data bus efficiency
- On-Die-Termination (ODT) for better signal quality
- Synchronous ODT
- Dynamic ODT
- Asynchronous ODT
- Multi Purpose Register (MPR) for temperature read out
- ZQ calibration for DQ drive and ODT
- Programmable Partial Array Self-Refresh (PASR)
- /RESET pin for Power-up sequence and reset function
- SRT range:
- Normal/extended
- Auto/manual self-refresh
- Programmable Output driver impedance control
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