EDD5116AFTA
- Density: 512M bits
- Organization
-8M words x 16 bits x 4 banks
- Package: 66-pin plastic TSOP (II)
-Lead-free (RoHS compliant)
- Power supply: VDD, VDDQ = 2.6V +/- 0.1V (DDR400)
- Power supply: VDD, VDDQ = 2.5V +/- 0.2V (DDR333/266)
- Data rate: 400Mbps/333Mbps/266Mbps (max.)
- Four internal banks for concurrent operation
- Interface: SSTL_2
- Burst lengths (BL): 2, 4, 8
- Burst type (BT):
-Sequential (2, 4, 8)
-Interleave (2, 4, 8)
- /CAS Latency (CL): 3 (DDR400)
- /CAS Latency (CL): 2, 2.5 (DDR333/266)
- Precharge: auto precharge option for each burst access
- Driver strength: normal/weak
- Refresh: auto-refresh, self-refresh
- Refresh cycles: 8192 cycles/64ms
-Average refresh period: 7.8 µs
- Operating ambient temperature range
-TA = 0'C to +70'C
- Double-data-rate architecture; two data transfers per clock cycle
- The high-speed data transfer is realized by the 2 bits prefetch pipelined architecture
- Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver
- Data inputs, outputs, and DM are synchronized with DQS
- DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Data mask (DM) for write data
|
