EDE2116ABSE
Specifications
- Density: 2G bits
- Organization
-16M words x 16 bits x 8 banks
- Package: 92-ball FBGA
-Lead-free (RoHS compliant)
- Power supply: VDD, VDDQ = 1.8V +/- 0.1V
- Data rate: 800Mbps/667Mbps/533Mbps (max.)
- 2KB page size
-Row address: A0 to A13
-Column address: A0 to A9
- Eight internal banks for concurrent operation
- Interface: SSTL_18
- Burst lengths (BL): 4, 8
- Burst type (BT):
-Sequential (4, 8)
-Interleave (4, 8)
- /CAS Latency (CL): 3, 4, 5, 6
- Precharge: auto precharge option for each burst access
- Driver strength: normal/weak
- Refresh: auto-refresh, self-refresh
- Refresh cycles: 8192 cycles/64ms
-Average refresh period
7.8 µs at 0'C <= TC <= +85'C
3.9 µs at +85'C < TC <= +95'C
- Operating case temperature range
-TC = 0'C to +95'C
Features
- Double-data-rate architecture; two data transfers per clock cycle
- The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
- Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
- DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Data mask (DM) for write data
- Posted /CAS by programmable additive latency for better command and data bus efficiency
- Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality
- /DQS, (/RDQS) can be disabled for single-ended Data Strobe operation
User's Manual, Technical Note
Page Top
