EDS2516AFTA

Specifications

• Density: 256M bits
• Organization
  -4M words x 16 bits x 4 banks
• Package: 54-pin plastic TSOP (II)
  -Lead-free (RoHS compliant)
• Power supply: VDD, VDDQ = 3.3V +/- 0.3V
• Clock frequency: 166MHz/133MHz (max.)
• Four internal banks for concurrent operation
• Interface: LVTTL
• Burst lengths (BL): 1, 2, 4, 8, full page
• Burst type (BT):
  -Sequential (1, 2, 4, 8, full page)
  -Interleave (1, 2, 4, 8)
• /CAS Latency (CL): 2, 3
• Precharge: auto precharge option for each burst access
• Refresh: auto-refresh, self-refresh
• Refresh cycles: 8192 cycles/64ms
  -Average refresh period: 7.8 µs
• Operating ambient temperature range
  -TA = 0'C to +70'C

Features

• Single pulsed /RAS
• Burst read/write operation and burst read/single write operation capability
• Byte control by UDQM and LDQM

Ordering Information

User's Manual, Technical Note

• HOW TO USE SDRAM - User's Manual (PDF: 724KB)
• SYNCHRONOUS DRAM - Application Note (PDF: 408KB)

• RECOMMENDED SOLDERING CONDITIONS & STORAGE CONDITIONS - TN (PDF: 199KB)