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EDX5116ADSE

Description

The EDX5116ADSE is a 512M bits XDR DRAM organized as 32M words x 16 bits. It is a general-purpose high-performance memory device suitable for use in a broad range of applications.

The use of Differential Rambus Signaling Level (DRSL) technology permits 4000/3200 Mb/s transfer rates while using conventional system and board design technologies. XDR DRA devices are capable of sustained data transfers of 8000/6400 MB/s.

XDR DRAM device architecture allows the highest sustained bandwidth for multiple, interleaved randomly addressed memory transactions. The highly-efficient protocol yields over 95% utilization while allowing fine access granularity. The device's eight banks support up to four interleaved transactions.

It is packaged in 104-ball FBGA compatible with Rambus XDR DRAM pin configuration.

Features

Ordering Information

Part Number Grade Package Datasheet IBIS Verilog
EDX5116ADSE-4D-E 4.0D 104-FBGA E1033E40 Avail. -
EDX5116ADSE-3C-E 3.2C 104-FBGA E1033E40 Avail. -

User's Manual, Technical Note

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