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XDR DRAM

Ahead of the field, Elpida Memory is extensively promoting the development of XDR DRAM. The competitive edge gained by Elpida Memory's advanced technological and production capabilities enables us to take a leading share in the XDR market.

Features

Highest pin bandwidth

  • 4.8/4.0/3.2Gbps Octal Data Rate (ODR) signaling
    4.8/4.0/3.2GHz data rate, octuple the data transfer rate of 600/500/400MHz system clock
  • Bi-directional differential RSL (DRSL)
    Flexible read / write bandwidth allocation
    Minimum pin count
  • On-chip termination
    Reduced system cost and routing complexity

Low power

  • 1.8V(512Mb) / 1.5V(1Gb) VDD
  • Small-swing I/O signaling (DRSL) (200mV)
  • Power-down support

Highest sustained bandwidth per DRAM device

  • 9.6GB/s (4.8E), 8.0GB/s (4.0D), 6.4GB/s (3.2A, 3.2B, 3.2C) peak data transfer rate
  • 8 banks:
    Bank-interleaved transactions at full bandwidth
  • Dynamic request scheduling
  • Early-read-after-write support for maximum efficiency
  • Zero overhead refresh

Package

  • 104-ball FBGA (x16)
    Ball-pitch 1.27mm / 0.8mm
  • 150-ball FBGA (x32)
    Ball-pitch 1.0mm / 1.0mm

XDR DRAM

Lineup

1Gbit

wordxbit Int. Banks Grade Part Number Class Supply Voltage Refresh Cycles Rev. Package Datasheet Simulation Model Product Status Remark
64M x 16 8 4.8E EDX1016BASE 5E-F 1.5V+/-0.075V 16ms A 104-FBGA E1332E40X ES Lead & Halogen Free
4.0D 4D-F ES Lead & Halogen Free
3.2C 3C-F ES Lead & Halogen Free
32M x 32 8 3.2C EDX1032BASE 3C-F 1.5V+/-0.075V 16ms A 150-FBGA E1332E40X Lead & Halogen Free

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512Mbit

wordxbit Int. Banks Grade Part Number Class Supply Voltage Refresh Cycles Rev. Package Datasheet Simulation Model Product Status Remark
32M x 16 8 4.8E EDX5116ADSE 5E-E 1.875V+/-0.075V 16ms D 104-FBGA E1198E20X ES  
4.0D 4D-E 1.8V+/-0.09V E1033E30 MP
3.2C 3C-E MP

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*Product Status: UD:Under Development, ES:Engineering Sample, MP:Mass Production, Ask:Contact Elpida sales to check the production status


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